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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| IRF9610-004PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
| IRF540-029 | Vishay Intertechnologies | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
| AD | IRF3710PBF | Infineon Technologies | MOSFET/FET,IRF3710 - 12V-300V N-Channel Power MOSFET | |||||
| IRF-36820UH+-10%ERE3 | Vishay Intertechnologies | General Purpose Inductor, 820uH, 10%, Ferrite-Core, | - | |||||
| IRF03STR39M | Vishay Intertechnologies | General Purpose Inductor, 0.39uH, 20%, Ferrite-Core, | - | |||||
| IRF-30.56UH+-20%RJ4 | Vishay Intertechnologies | General Purpose Inductor, 0.56uH, 20%, Ferrite-Core, | - | |||||
| IRFZ10-001PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
| IRF01EV5R6K | Vishay Intertechnologies | General Purpose Inductor, 5.6uH, 10%, Ferrite-Core, | - | |||||
| IRF-356UH+-5%EVE2 | Vishay Intertechnologies | General Purpose Inductor, 56uH, 5%, Ferrite-Core, | - | |||||
| IRF830LPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
| IRFIBC20G-010 | Vishay Intertechnologies | Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
| IRF01ES101J | Vishay Intertechnologies | General Purpose Inductor, 100uH, 5%, Ferrite-Core, | - | |||||
| IRF740AL | Vishay Intertechnologies | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | - | |||||
| IRF-11.2UH+-10%ESE2 | Vishay Intertechnologies | General Purpose Inductor, 1.2uH, 10%, Ferrite-Core, | - | |||||
| IRF9540-015 | Vishay Intertechnologies | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
| IRFI620G-012 | Vishay Intertechnologies | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
| IRF03SH331J | Vishay Intertechnologies | General Purpose Inductor, 330uH, 5%, Ferrite-Core, | - | |||||
| IRF9540-017PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
| IRF-18.2UH+-5%RJ4 | Vishay Intertechnologies | General Purpose Inductor, 8.2uH, 5%, Ferrite-Core, | - | |||||
| IRFIBE20G-019PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 1.4A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
| IRF614FXPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
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